Switching processes in high-frequency converters

被引：2
|
作者：
Togatov, V. V. [1 ]
Gnatyuk, P. A. [1 ]
Ternovskii, D. S. [1 ]
机构：
[1] St Petersburg State Univ Informat Technol Mech &, Dept Elect, St Petersburg, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2008年 / 51卷 / 06期
关键词：
84; 70; +p; 06; 60; Jn;
D O I：
10.1134/S0020441208060079
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of an inductance in the circuit of the source of a field-effect transistor on the character of switching processes in high-frequency converters is analyzed. It is shown that the inductance in the source circuit has a crucial effect on all stages of the transistor switching process and limits the maximum efficiency of the converter that includes this transistor. Conditions for attaining the ultrafast MOS-transistor switching-on and-off modes are formulated.
引用
收藏
页码：808 / 819
页数：12
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