Thermally evaporated methylammonium-free perovskite solar cells

被引:51
|
作者
Ji, Ran [1 ,2 ]
Zhang, Zongbao [1 ,2 ]
Cho, Changsoon [1 ,2 ]
An, Qingzhi [1 ,2 ]
Paulus, Fabian [1 ,2 ]
Kroll, Martin [1 ,2 ]
Loeffler, Markus [3 ]
Nehm, Frederik [1 ,2 ]
Rellinghaus, Bernd [3 ]
Leo, Karl [1 ,2 ]
Vaynzof, Yana [1 ,2 ]
机构
[1] Tech Univ Dresden, Integrated Ctr Appl Phys & Photon Mat IAPP, Nothnizerstr 61, D-01187 Dresden, Germany
[2] Tech Univ Dresden, Ctr Adv Elect Dresden CFAED, Nothnizerstr 61, D-01187 Dresden, Germany
[3] Tech Univ Dresden, Ctr Adv Elect Dresden CFAED, Dresden Ctr Nanoanalysis DCN, D-01187 Dresden, Germany
关键词
CHEMICAL-VAPOR-DEPOSITION; P-I-N; HALIDE PEROVSKITES; THIN-FILMS; PASSIVATION; PERFORMANCE; HYSTERESIS; LAYERS; AREA;
D O I
10.1039/d0tc01550d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal evaporation is a well-established and versatile method for the deposition of large-area, uniform, high-quality semiconducting layers in a broad range of optoelectronic applications. Despite extensive investigation of deposition by thermal evaporation in the field of perovskite solar cells, solution-processed perovskite devices still significantly outperform those fabricated by thermal evaporation, particularly in the case of methylammonium-free perovskite compositions. Herein, we fabricate and investigate thermally evaporated Cs(0.1)FA(x)PbI(2+x)Br(0.1)perovskite solar cells and explore the effects of FAI deficiency or excess and that of post-annealing on the perovskite layer properties and device performance. We find that annealing can significantly improve the optical and structural properties of FAI-poor perovskite layers, resulting in a stark enhancement of their photovoltaic performance. While stoichiometric devices are also improved, albeit to a lesser degree, by post-annealing, this process is found to be detrimental for the FAI-rich devices, resulting in a drastic loss of performance. We show that annealed stoichiometric devices with an optimised active layer thickness result in power conversion efficiencies of up to 16.6%, approaching the performance of solution-processed devices of similar composition.
引用
收藏
页码:7725 / 7733
页数:9
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