An unified model to characterize the strong inversion high-frequency capacitance in thin oxide MOS structures under Fowler-Nordheim tunneling injection condition

A detailed analysis of the strong inversion high frequency, capacitance under the Fowler-Nordheim (F-N) tunneling injection is of great relevance for the modeling and characterization of the thin oxide MOS devices and full exploration of the capabilities of floating gate E(2)prom. We found that the F-N current strongly affects the transient capacitance in the thin oxide MOS structures and has different behavior in NMOSC and PMOSC. The quasi-equilibrium capacitance decrease for PMOSC[1] and increase for NMOS-C-[2] with increasing F-N current. In this paper, we present an unified physical model that relates the dynamics cf the surface charge region of thin oxide PMOS and NMOS structures to the F-N tunneling injection.