Nanostructures and luminescence properties of porous ZnO thin films prepared by sol-gel process

被引：16
|
作者：
Kim, Nam-Jung [1 ]
Choi, Seung-Ii [2 ]
Lee, Hee Jung [2 ]
Kim, Kwang Joo [2 ]
机构：
[1] Univ Missouri, Dept Mech & Aerosp Engn, Columbia, MO 65211 USA
[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 03期
关键词：
Zinc oxide; Porous thin films; Photoluminescence; Lamellar structure; ZINC-OXIDE; PHOTOLUMINESCENCE; NANORODS; HYDROGEN;
D O I：
10.1016/j.cap.2008.04.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin films containing nano-sized pores were synthesized on solid substrates through a sol-gel process by accommodating cetyl-trimethyl-ammonium bromide (CTAB) as an organic template in the precursor solution. By X-ray diffraction the resultant ZnO films were found to possess ordered pore arrays forming lamellar structure with the spacing between two adjacent pores being similar to 3.0 nm. Photoluminescence measurements indicated that the surfactants effectively passivated the surface defects of the ZnO films responsible for the green emission. Al doping was found to improve not only the lamellar structure of the pore arrays but also the near-band-gap emission intensity while the suppression effect of CTAB on the green emission remained undisturbed. With a proper control of doping level, the optical property as well as the structural integrity can be tailored to augment the potential of ZnO films for the optoelectronics and sensor applications. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：643 / 646
页数：4
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