Very large transverse magnetoresistance effect in glass-coated bismuth wires with micron and submicron diameters

被引:0
|
作者
Grozav, AD [1 ]
机构
[1] Inst Appl Phys, Lab Semimetal Phys, Kishinev, Moldova
关键词
D O I
10.1109/SMICND.2001.967475
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It was shown that the glass-coated melt spinning method allows fabrication of the thin Bi wires with very large values of transverse magnetoresistance (MR) at 300, 77 and 4.2 K. These single-crystalline wires exhibit MR which is anisotropic and sensitive to the surface scattering even at room temperature. The Bi microwires can be potentially used for fabrication of sensitive magnetoresistive elements because they have not only a large MR value, but also a high element zero-field resistance.
引用
收藏
页码:323 / 326
页数:4
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