Microcontroller Power Integrity Black-Box Model

被引:0
|
作者
Yuan, Shih-Yi [1 ]
Chen, Cheng-Chang [2 ]
机构
[1] Feng Chia Univ, Dep Commun Engn, Taichung 40724, Taiwan
[2] Metrol & Inspect, Bur Standards, Taipei, Taiwan
关键词
Power Integrity model; black-box model; Integrated Circuit modeling;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Electronics is now essential to many power controlling features. Among all of the electronic modules, the central part is the microcontroller (mu C). The power integrity (PI) of such modules, by all means, is one of the most critical issues for mu C. Due to the fast advances of mu C design and VLSI processing technologies, Platform-Based Design Methodology (PBDM) is now the major design trend for such modules. Due to intellectual property considerations, IC design companies seldom expose internal architecture details of their IC products to PI modelers. Since the internal module behaviors are unknown, it makes PI modeling very difficult. The proposed block-box PI modeling method for mu C is based on the measurement of a pre-prepared testing board(s) to build a PI model. The concept is based on block-box discrete impulse response (BBIR) function calculation. BBIR is based on solely measurement basis and treat the target as a block-box. Through block-box type deductions and measurements, BBIR model can be built. After the model building process, the PI behavior of a new testing board (or module) with the same mu C are estimated according to BBIR model. A case study is given for the effectiveness of the proposed method. In this case study, the PI model is firstly built and, then, followed by a real measurement of the PI behaviors of the new testing board. The proposed model is verified by the comparison of the estimated data and the physical measurements. From the experiment results, it shows that the proposed power model does in good accordance with the PI behavior of the target mu C both in time-domain and frequency-domain.
引用
收藏
页码:445 / 448
页数:4
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