Dielectric Charging Model for Metal-Insulator-Metal Structures

被引：0

作者：

Amiaud, Anne-Charlotte ^{[1
]}

Leuliet, Aude ^{[1
]}

Nagle, Julien ^{[1
]}

Loiseaux, Brigitte ^{[1
]}

Martins, Paolo ^{[1
]}

Aubry, Raphael ^{[1
]}

Hole, Stephane ^{[2
]}

机构：

[1] Thales Res & Technol, Palaiseau, France

[2] PSL Res Univ, ESPCI Paris, UPMC, Sorbonne Univ,LPEM,CNRS, Paris, France

来源：

2017 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM), VOLS 1 & 2 | 2017年

关键词：

carrier accumulation; charge transport mechanisms; dielectric charging model; component reliability; MEMS CAPACITIVE SWITCHES; SILICON-NITRIDE FILMS; RF MEMS; RELIABILITY; TRANSPORT; SYSTEMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the challenges in the microelectronic field is to improve the component reliability. In this work dielectric charging process in capacitive structures under bias voltage is particularly investigated. A new dielectric charging model to study charge accumulation in insulator thin films is presented. It allows a better understanding of charge transport mechanisms and physical charging process in dielectrics. This model will contribute to estimate and improve the lifetime of devices containing a dielectric thin film.

引用

页码：51 / 53

页数：3

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