HBM and TLP ESD robustness in smart-power protection structures

被引：2
|
作者：
Santirosi, S
Meneghesso, G
Novarini, E
Contiero, C
Zanoni, E
机构：
[1] ST Microelect, Dedicated Prod Grp, I-20010 Milan, Italy
[2] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy
[3] IMFM, Padua, Italy
[4] Corsorzio Padova Ric, Padua, Italy
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 6-7期
关键词：
D O I：
10.1016/S0026-2714(99)00110-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we will present data concerning the ESD robustness of smart power protection structures (BCD technology) for input-output circuits. A comparison between the robustness of "p-body" and "p-well" based structures and a study of the influence of layout parameters on the ESD robustness will be given. The correlation between ESD robustness obtained with different test methods (HBM and TLP) will be also presented. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：839 / 844
页数：6
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