Forms and concentration of adsorbed oxygen on the modified surface of SnO2

被引：1
|
作者：
Pronin, I. A. [1 ,2 ]
Yakushova, N. D. [1 ]
Karmanov, A. A. [1 ]
Averin, I. A. [1 ]
Moshnikov, V. A. [2 ]
机构：
[1] Penza State Univ, Dept Nano & Microelect, Penza 440026, Russia
[2] St Petersburg Electrotech Univ LETI, Dept Micro & Nanoelect, St Petersburg 197376, Russia
来源：
26TH INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY | 2019年 / 1313卷
关键词：
D O I：
10.1088/1742-6596/1313/1/012044
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature dependence of oxygen concentration and forms on the undoped and doped semiconductor tin dioxide has been analyzed. It has been found that the main forms of oxygen at operation temperatures of most gas sensors are O- and O2-. When the parent oxide is doped with ions of greater Lewis force, the concentrations of all forms of surface oxygen increase. However, in all cases, defectiveness of semiconductor materials is the main contributor to gas sensitivity.
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页数：4
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