Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers and the δ-doping

被引：9
|
作者：
Zhang, Lan-Lan [1 ,2 ]
Lu, Mao-Wang [1 ,2 ]
Yang, Shi-Peng [1 ,2 ]
Tang, Qiang [1 ,2 ]
机构：
[1] Hunan First Normal Univ, Changsha 410205, Hunan, Peoples R China
[2] Guilin Univ Technol, Guilin 541004, Peoples R China
来源：
PHYSICS LETTERS A | 2016年 / 380卷 / 42期
基金：
中国国家自然科学基金;
关键词：
Magnetic nanostructure; The delta-doping; Giant magnetoresistance (GMR) effect; The magnetoresistance ratio (MR); Structurally-controllable GMR device; CONFINED SEMICONDUCTOR HETEROSTRUCTURE; NANOSTRUCTURE;
D O I：
10.1016/j.physleta.2016.08.046
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We theoretically investigate the modulation of the delta-doping to a semiconductor-based giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic (FM) stripes on top and bottom of a GaAs/AlxGa1-xAs heterostructure. It is shown that a considerable GMR effect still exists in this device with the delta-doping. It is also shown that the magnetoresistance ratio (MR) depends on not only the weight but also the position of the delta-doping. These interesting results will be useful in understanding and designing structurally-controllable GMR devices for magnetic information storage. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：3520 / 3523
页数：4
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