Germanium-Tin Heterojunction Phototransistor: Towards High-Efficiency Low-Power Photodetection in Short-Wave Infrared Range

被引：0

作者：

Wang, Wei ^{[1
]}

Dong, Yuan ^{[1
]}

Lee, Shuh Ying ^{[2
]}

Loke, Wan Khai ^{[2
]}

Gong, Xiao ^{[1
]}

Yoon, Soon-Fatt ^{[2
]}

Liang, Gengchiau ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the world's first demonstration of Germanium-Tin (Ge1-xSnx) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of similar to 10 times over the conventional p-i-n Ge1-xSnx photodiode (PD) was achieved, with photodetection beyond 2003 nm. High responsivities of similar to 2.6 A/W at 1510 nm and similar to 0.19 A/W at 1877 nm were achieved at a low operating bias of 1.0 V.

引用

页数：2

共 16 条

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