Observation of temperature effect on electrical properties of novel Au/Bi0.7Dy0.3FeO3/ZnO/p-Si thin film MIS capacitor for MEMS applications

In this work thedependence of electrical properties on operation temperature (27 degrees C to 200 degrees C) of Au-Cr/Bi0.7Dy0.3FeO3 (BDFO)/ZnO/p-Si (MIS device) are discussed. The thin film of BDFO was deposited by pulsed laser deposition (PLD) on p-Si. From the electrical characterization, the devices properties like ideality factor (eta), barrier height) (BH) of Au-Cr/BDFO/ZnO/p-Si MIS were determined. The values of eta and BH were found to be 134.and 0.86 eV at 200 degrees C and 2.16 and 0.30 eV; respectively, at room temperature (27 degrees C). The leakage current conduction mechanism of the device was investigated and found to be Schottky emission (SE) in the low electric field (<0.92 MV cm(-1)) regime and trap assisted Poole-Frenkel (PF) mechanism for high electric field regime. The coexistence of ferroelectric and ferromagnetic coupling and excellent dielectric properties in multiferroic BDFO offers potential in the field of memory devices; sensing and energy harvesting (cantilevers). (C) 2016 Elsevier B.V. All rights reserved.