InP-based two dimensional photonic crystals - A material and processing perspective

被引:0
|
作者
Anand, S. [1 ]
Berrier, A. [1 ]
机构
[1] Royal Inst Technol, Dept Microelect & Appl Phys, SE-16440 Kista, Sweden
关键词
D O I
10.1109/ICTON.2008.4598579
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall Surface potential will be demonstrated.
引用
收藏
页码:25 / 25
页数:1
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