Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core-Shell Nanowires through Shell Growth Optimization

被引：87
|
作者：
Jiang, N. [1 ]
Gao, Q. [1 ]
Parkinson, P. [2 ]
Wong-Leung, J. [1 ,3 ]
Mokkapati, S. [1 ]
Breuer, S. [1 ]
Tan, H. H. [1 ]
Zheng, C. L. [4 ]
Etheridge, J. [4 ,5 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, GPO Box 4, Canberra, ACT 0200, Australia
[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[3] Australian Natl Univ, Ctr Adv Microscopy, Canberra, ACT 0200, Australia
[4] Monash Univ, Monash Ctr Electron Microscopy, Clayton, Vic 3800, Australia
[5] Monash Univ, Dept Mat Engn, Clayton, Vic 3800, Australia
来源：
NANO LETTERS | 2013年 / 13卷 / 11期
基金：
澳大利亚研究理事会;
关键词：
GaAs/AlGaAs; nanowires; minority carrier lifetimes; MOCVD; HAADF-STEM; SOLAR-CELLS; CARBON INCORPORATION; SILICON NANOWIRES; EPITAXIAL-GROWTH; ATOMIC DIFFUSION; OMVPE GROWTH; FERMI-LEVEL; GAAS; INTERDIFFUSION; PHOTOLUMINESCENCE;
D O I：
10.1021/nl4023385
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Intercliffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion.
引用
收藏
页码：5135 / 5140
页数：6
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