Mechanism of anodic oxidation of tungsten in neutral sulphate-fluoride solutions

被引:16
|
作者
Karastoyanov, Vassil [1 ]
Bojinov, Martin [1 ]
机构
[1] Univ Chem Technol & Met, Dept Phys Chem, BU-1756 Sofia, Bulgaria
关键词
Tungsten; Anodic oxide film; Point defect; Impedance spectroscopy; Kinetic model; FILM GROWTH; WO3; FILMS; SEMICONDUCTING PROPERTIES; PASSIVE FILM; OXIDE-GROWTH; BEHAVIOR; METHANOL; KINETICS; ELECTRODES; EQCM;
D O I
10.1007/s10008-008-0544-0
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The anodic oxidation of tungsten has been studied in 1 M Na2SO4 solutions containing 0-0.25 M NaF. Steady-state currents measured in the passivation and passivity ranges increase significantly with increasing fluoride concentration, indicating enhanced dissolution of the oxide film. The electrochemical impedance response is dominated by the processes in the barrier layer and at its interface with the electrolyte. The presence of a pseudo-inductive loop in the impedance spectra at intermediate frequencies indicates point defect interaction during film growth and dissolution processes. A kinetic model including the recombination reaction between oppositely charged point defects at the film/solution interface as well as a kinetic scheme for tungsten dissolution through the film mediated by cation vacancies is proposed. It is found to reproduce satisfactorily the steady-state currents and the impedance spectra in the potential range 0.2-2 V. Such a model for the conduction mechanism in the barrier layer is believed to be an essential part of a modelling approach to the formation of a nanoporous overlayer on tungsten in fluoride-containing solutions.
引用
收藏
页码:309 / 320
页数:12
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