Plasma etching induced damage to strained Si/SiGe/Si heterostructure

被引：0
|
作者：
Swain, PK [1 ]
Misra, D [1 ]
Cole, M [1 ]
机构：
[1] NEW JERSEY INST TECHNOL,DEPT ELECT & COMP ENGN,NEWARK,NJ 07102
来源：
1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：133 / 136
页数：4
相关论文
共 50 条
  • [1] Annealing behavior of plasma etching induced defects in Si/SiGe/Si heterostructure
    Swain, PK
    Misra, D
    [J]. PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESSING, 1996, 96 (12): : 169 - 177
  • [2] Sidewall damage in plasma etching of Si/SiGe heterostructures
    Ding, R.
    Klein, L. J.
    Friesen, Mark G.
    Eriksson, M. A.
    Wendt, A. E.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (04): : 836 - 843
  • [3] THERMAL RELAXATION OF STRAINED SIGE/SI HETEROSTRUCTURE
    SHIGEKAWA, H
    KANAYA, H
    CHO, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05): : L736 - L738
  • [4] Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation
    Shao, L
    Lin, Y
    Lee, JK
    Jia, QX
    Wang, YQ
    Nastasi, M
    Thompson, PE
    Theodore, ND
    Chu, PK
    Alford, TL
    Mayer, JW
    Chen, P
    Lau, SS
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (09)
  • [5] Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructure
    Swain, PK
    Misra, D
    Thompson, PE
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4402 - 4406
  • [6] Sub-micron strained Si:SiGe heterostructure MOSFETs
    Clifton, PA
    Lavelle, SJ
    ONeill, AG
    [J]. MICROELECTRONICS JOURNAL, 1997, 28 (6-7) : 691 - 701
  • [7] Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure
    Garchery, L
    Sagnes, I
    Badoz, PA
    [J]. APPLIED SURFACE SCIENCE, 1996, 102 : 202 - 207
  • [8] Anisotropic fluorocarbon plasma etching of Si/SiGe heterostructures
    Ding, R.
    Klein, L. J.
    Eriksson, M. A.
    Wendt, A. E.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (02): : 404 - 409
  • [9] Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
    Huang, S-H.
    Lu, T-M.
    Lu, S-C.
    Lee, C-H.
    Liu, C. W.
    Tsui, D. C.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (04)
  • [10] SI DAMAGE INDUCED BY DRY ETCHING
    PANG, S
    RATHMAN, DD
    SILVERSMITH, DJ
    MOUNTAIN, RW
    DEGRAFF, PD
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C327 - C327
12345