Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals

被引：9
|
作者：
Isik, M. [1 ]
Gasanly, N. M. [2 ]
Korkmaz, F. [1 ]
机构：
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[2] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
来源：
PHYSICA B-CONDENSED MATTER | 2013年 / 421卷
关键词：
Semiconductors; Chalcogenides; Optical properties; Raman scattering; LATTICE-DYNAMICS; PHASE-TRANSITION; SPECTRA; RAMAN; GASE;
D O I：
10.1016/j.physb.2013.03.046
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.
引用
收藏
页码：50 / 52
页数：3
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