Efficient Cu(In,Ga)Se2 thin film solar cells with reduced thickness of ZnS(O,OH) Buffer Layer

被引：16
|
作者：
Kobayashi, Taizo [1 ]
Nakada, Tokio [1 ]
机构：
[1] Tokyo Univ Sci, Res Inst Sci & Technol, Photovolta Sci & Technol Res Div, Midori Ku, Sagamihara, Kanagawa 2520131, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 117卷
关键词：
Cu(InGa)Se-2; ZnS(O; OH); Chemical bath deposition; Heat light-soaking; CHEMICAL BATH DEPOSITION; PERFORMANCE;
D O I：
10.1016/j.solmat.2013.07.026
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The influence of the buffer layer thickness and the thiourea concentration in chemical bath on the cell performance of ZnS(O,OH)/CIGS solar cells was investigated. It was found that a high efficiency CIGS solar cell could be achieved by increasing the thiourea concentration in the chemical bath deposition (CBD) solution even if a very thin ZnS(O,OH) buffer layer (10 nm) was used. As a result, the CBD deposition time could be shortened to one six as compared to that of thicker buffer layer thickness of 120 nm. The results are discussed in connection with the conduction band offset at the ZnS(O,OH)/CIGS interface. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：526 / 530
页数：5
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