Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

被引：4

作者：

Song, Shiwei ^{[1
]}

Shen, Rensheng ^{[1
]}

Liang, Hongwei ^{[1
,2
]}

Liu, Yang ^{[1
]}

Xia, Xiaochuan ^{[1
]}

Zhang, Kexiong ^{[1
]}

Yang, Dechao ^{[3
]}

Wang, Dongsheng ^{[1
]}

Du, Guotong ^{[1
,3
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[3] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 09期

基金：

中国国家自然科学基金;

关键词：

SURFACE; LAYERS; FILMS;

D O I：

10.1007/s10854-013-1246-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H-2 in metal organic chemical vapor deposition system. It was found that in situ H-2 treatment brought a porous SiC surface. The influence of H-2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H-2 pre-treatment can distinctly influence the GaN basic characteristics.

引用

页码：3299 / 3302

页数：4

共 41 条

[1] Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment
Shiwei Song
Rensheng Shen
Hongwei Liang
Yang Liu
Xiaochuan Xia
Kexiong Zhang
Dechao Yang
Dongsheng Wang
Guotong Du
[J]. Journal of Materials Science: Materials in Electronics, 2013, 24 : 3299 - 3302
[2] Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
Song, Shiwei
Liu, Yang
Liang, Hongwei
Yang, Dechao
Zhang, Kexiong
Xia, Xiaochuan
Shen, Rensheng
Du, Guotong
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (08) : 2923 - 2927
[3] Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
Shiwei Song
Yang Liu
Hongwei Liang
Dechao Yang
Kexiong Zhang
Xiaochuan Xia
Rensheng Shen
Guotong Du
[J]. Journal of Materials Science: Materials in Electronics, 2013, 24 : 2923 - 2927
[4] Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE
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杨静
赵德刚
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