Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers

被引：4
|
作者：
Yu, SF
Li, EH
机构：
[1] Dept. of Elec. and Electron. Eng., University of Hong Kong, Hong Kong, Pokfulam Road
[2] London University, University College
[3] Cambridge University, Robinson College
[4] Kirsten Aeronautical Laboratory, Seattle, WA
[5] K. K. Engineering, Co., Hong Kong
[6] Micro Systems, Hong Kong
[7] National Ion Implantation Facility, Department of EEE, University of Surrey
[8] Optoelectronics Team, Department of EEE
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 01期
关键词：
D O I：
10.1109/3.481913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers, It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices.
引用
收藏
页码：1 / 3
页数：3
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