Hybrid integrated velocity matched travelling-wave InP/InGaAs photodetectors with silicon nitride waveguides

被引：0
|
作者：
Xu, Pengfei [1 ]
Chen, Yujie [1 ]
Shao, Zengkai [1 ]
Zhang, Yanfeng [1 ]
Zhang, Tianyou [1 ]
Wu, Zeru [1 ]
Yang, Chunchuan [1 ]
Liu, Lin [1 ]
Zhou, Lidan [1 ]
Chen, Hui [1 ]
Liu, Jie [1 ]
Yu, Siyuan [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2016年
基金：
高等学校博士学科点专项科研基金;
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Broad-bandwidth high-responsivity waveguide integrated photodetectors are key optoelectronic devices for on-chip photoelectric conversion and radio frequency (RF) signal demodulations. Here, a hybrid integrated InP/InGaAs travelling-wave photodetector based on slotline transmission line with velocity-matched bent silicon nitride (SiNx) optical waveguide is studied. Besides, the fabrication of the hybrid integrated TWPD device is demonstrated.
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页数：3
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