Nb2O5 thin films have been prepared using diethanolamine stabilized precursor sol and annealed at 500 degrees C. The optical, electrochemical, structural and morphological properties of Nb2O5 thin film are described. The X-ray diffraction study shows the formation of hexagonal crystal structure in the film. The presence of Nb-O linkage has been confirmed from the FT-IR. data. The coexistence of nanorod-like structures and round shaped polycrystalline grains has contributed to an enhanced electrochemical activity in the film. The Li ion storage capacity of the film is similar to 9.0 mC cm(-2) at a sweep rate of 20 mV s(-1) a single layer coating. The optical modulation, coloration efficiency, and coloration/bleaching time of the film are 30.6% (at 550 nm), 25 cm(2) C-1 (at 550 nm) and 171 s/6 s, respectively. The appreciably high coloration efficiency and fast switching kinetics shows the potential utility of these films in electrochromic windows.
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UNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCEUNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCE
GRIESMAR, P
PAPIN, G
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UNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCEUNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCE
PAPIN, G
SANCHEZ, C
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UNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCEUNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCE
SANCHEZ, C
LIVAGE, J
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UNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCEUNIV PARIS 06,CHIM MAT CONDENSEE LAB,URA 302,4 PL JUSSIEU,F-75252 PARIS 05,FRANCE
机构:
Sci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, JapanSci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan
Nishio, K
Tsuchiya, T
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Sci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, JapanSci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan
机构:
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Wuhan Univ Technol, Inst Mat Sci & Engn, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Jin, Aiping
Chen, Wen
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Wuhan Univ Technol, Inst Mat Sci & Engn, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Chen, Wen
Zhu, Quanyao
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Wuhan Univ Technol, Inst Mat Sci & Engn, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Zhu, Quanyao
Yang, Ying
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Wuhan Univ Technol, Inst Mat Sci & Engn, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Yang, Ying
Volkov, V. L.
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Russian Acad Sci, Inst Solid State chem, Ural Div, Yekaterinbur 620219, RussiaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Volkov, V. L.
Zakharova, G. S.
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Russian Acad Sci, Inst Solid State chem, Ural Div, Yekaterinbur 620219, RussiaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China