Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm

被引：16
|
作者：
Bek, Roman [1 ,2 ]
Baumgaertner, Stefan [1 ,2 ]
Sauter, Fabian [1 ,2 ]
Kahle, Hermann [1 ,2 ]
Schwarzbaeck, Thomas [1 ,2 ,3 ]
Jetter, Michael [1 ,2 ]
Michler, Peter [1 ,2 ]
机构：
[1] Univ Stuttgart, Inst Halbleiteropt & Funkt Grenzflachen, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Res Ctr SCoPE, D-70569 Stuttgart, Germany
[3] TRUMPF Lasersyst Semicond Mfg GmbH, Div Opt Dev, D-71245 Ditzingen, Germany
来源：
OPTICS EXPRESS | 2015年 / 23卷 / 15期
关键词：
SURFACE-EMITTING LASER; PULSES; VECSEL; OUTPUT;
D O I：
10.1364/OE.23.019947
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm. (C) 2015 Optical Society of America
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页码：19947 / 19953
页数：7
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