Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p-n junctions

被引：11

作者：

Shi, Changzhi ^{[1
]}

Lin, Chun ^{[1
]}

Wei, Yanfeng ^{[1
]}

Chen, Lu ^{[1
]}

Zhu, Mingxing ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, 500 Yutian Rd, Shanghai 200083, Peoples R China

来源：

APPLIED OPTICS | 2016年 / 55卷 / 34期

关键词：

PROFILES; ARRAYS;

D O I：

10.1364/AO.55.00D101

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The HgCdTe layers (x(Cd) similar to 0.285 and 0.225) were grown by molecular beam epitaxy and liquid phase epitaxy, respectively, followed by the deposition of CdTe and ZnS films as barrier layers by thermal evaporation. Then, the p-on-n photodiodes were fabricated by AS ion implantation, Hg overpressure annealing, passivation, and metallization. The secondary ion mass spectrometry and transmission electron microscopy results indicate that the evaporated CdTe layer with a column structure induces the channeling effect of As ion implantation causing the device performance degradation. This effect could be suppressed by depositing a CdTe film with a layered structure through E-beam evaporation. Finally, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these p-n junctions were estimated and analyzed. (C) 2016 Optical Society of America

引用

页码：D101 / D105

页数：5