Group III-nitride based gas sensors for exhaust gas monitoring

被引：0

作者：

Schalwig, J ^{[1
]}

Müller, G ^{[1
]}

Ambacher, O ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] EADS Deutschland GmbH, MX, LG, IRT, D-81663 Munich, Germany

来源：

TRANSDUCERS '01: EUROSENSORS XV, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2 | 2001年

关键词：

group-III-nitrides; semiconductor gas sensors; exhaust gas aftertreatment;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

Pt-GaN Schottky devices with catalytically active platinum (Pt) electrodes were investigated. Some measurements were also performed on high-electron-mobility transistors based on GaN/AlGaN heterostructures. The response of these devices towards a number of relevant exhaust gas components such as H-2, HC, CO, NO and NO2 was tested. Sensitivity and cross sensitivity profiles were found to depend on temperature, the porosity of the Pt gates as well as on the polarity of the underlying GaN material.

引用

页码：828 / 831

页数：4

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