Carbon and carbon nitride planar waveguides on silicon substrates

被引：13
|
作者：
Huttel, I
Gurovic, J
Cerny, F
Pospisil, J
机构：
[1] Czech Tech Univ, Fac Mech Engn, Dept Phys, Prague 16607, Czech Republic
[2] Prague Inst Chem Technol, CR-16628 Prague, Czech Republic
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期
关键词：
carbon nitride; IR absorption spectroscopy; PECVD carbon coating; planar waveguide;
D O I：
10.1016/S0925-9635(98)00408-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This contribution deals with the study and realization of optical planar waveguides on semiconductor (silicon) substrate by the method of plasma enhanced chemical vapor deposition (PECVD). Planar waveguides are created by a carbon layer deposited in the PECVD apparatus on a silicon oxide layer which provides optical shielding of the substrate and is prepared by oxidation of a silicon wafer. Optical properties of the waveguides were measured by standard prism spectroscopy at wavelength 633 nm. The attenuation of the waveguide at the best sample was 0.3 dB cm(-1). (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：628 / 630
页数：3
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