High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd:GdVO4 Laser

被引：0
|
作者：
Zhou Rui [1 ,2 ]
Ruan Shuang-Chen [1 ]
Du Chen-Lin [1 ]
yao Jian-Quan [2 ]
机构：
[1] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen Key Lab Laser Engn, Shenzhen 518060, Peoples R China
[2] Tianjin Univ, Inst Laser & Optoelect, Coll Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 12期
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A high power cw all-solid-state 1.34-mu m Nd:GdVO4 laser is experimentally demonstrated.With a diode-double end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9 W is obtained at incident pump power of 96 W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-mu m laser. With the experimental data, the thermal-stress resistance figure of merit of Nd:GdVO4 crystal with 0.3at% Nd3+ doped level is calculated to be larger than 9.94 W/cm.
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页码：4273 / 4275
页数：3
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