A Study of a New Cleaning Agent for Post-CMP Pattern Wafer

被引：1
|
作者：
Gao, Baohong [1 ]
Zhu, Yadong [2 ]
Tan, Baimei [1 ]
Wang, Chenwei [1 ]
Niu, Xinhuan [1 ]
Huang, Yanyan [1 ]
Liu, Yuling [1 ]
Wang, Juan [1 ]
机构：
[1] Hebei Univ Technol, Inst Microelect, Tianjin 300130, Peoples R China
[2] Tianjin Univ Technol, Sch Elect Informat Engn, Tianjin 300384, Peoples R China
来源：
ADVANCES IN CHEMICAL ENGINEERING, PTS 1-3 | 2012年 / 396-398卷
关键词：
post CMP cleaning; pattern; chelating agent; inhibitor; CHEMICAL-MECHANICAL PLANARIZATION; COPPER;
D O I：
10.4028/www.scientific.net/AMR.396-398.802
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
In this paper, it studies a new cleaning agent for post CMP pattern wafers. The polyamine chelating agent R(NH2)(n) complexing agent is used in pattern post-CMP cleaning, and the inhibitor BTA can effectively protect the wafer. The surfactant should be appropriate, and the concentration should be 1.5 parts per thousand.
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页码：802 / +
页数：2
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