Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

被引：20
|
作者：
Casse, Gianluigi [1 ]
机构：
[1] Univ Liverpool, Dept Phys, Oliver Lodge Lab, Liverpool L69 7ZE, Merseyside, England
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 598卷 / 01期
关键词：
Silicon detectors; Radiation hardness; Super LHC detectors; SILICON DETECTORS; 3D DETECTORS; MAGNETIC-CZOCHRALSKI; COLUMNAR ELECTRODES; DOPING TYPE; IRRADIATION; HARDNESS; SENSORS; PROTON;
D O I：
10.1016/j.nima.2008.08.019
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 10(16) 1 MeV neutron equivalent (n(eq)) cm(-2). This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：54 / 60
页数：7
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