Characteristics of a Single-Layer Graphene Field Effect Transistor with UV/Ozone Treatment

被引：11

作者：

Liu, W. J. ^{[1
]}

Tran, X. A. ^{[1
]}

Liu, X. B. ^{[2
]}

Wei, J. ^{[3
]}

Yu, H. Y. ^{[4
]}

Sun, X. W. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Microelect, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[3] ASTAR, Singapore Inst Mfg Technol, Singapore 638075, Singapore

[4] South Univ Sci & Technol, Dept Elect & Comp Engn, Shenzhen 518055, Guangdong, Peoples R China

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 01期

基金：

中国国家自然科学基金;

关键词：

RAMAN-SPECTROSCOPY; ULTRAVIOLET OZONE; SUBSTRATE; DEFECTS; DEVICE; FILMS;

D O I：

10.1149/2.005301ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance of a single-layer graphene field effect transistor treated with UV/ozone at various temperatures is studied. It is observed that the number of the defects in graphene sheet increases with the UV/ozone treatment time, evidenced by Raman spectra. Moreover, the UV/ozone treatment dopes graphene into p-type as the time increases, which is consistent with the electric transfer measurements. With the increase in the UV/ozone treatment time, the mobility of graphene transistor degrades, and the degradation accelerates with the increase in temperature. We further verified by XPS measurement that the oxygen related carbon group O=C-O formation is the main cause for the mobility degradation. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.005301ssl] All rights reserved.

引用

页码：M1 / M4

页数：4

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