MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine

被引：4

作者：

Dong, JR ^{[1
]}

Teng, JH ^{[1
]}

Chua, SJ ^{[1
]}

Foo, BC ^{[1
]}

Wang, YJ ^{[1
]}

Yin, R ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 289卷 / 01期

关键词：

metalorganic chemical vapor deposition; quantum wells; TBAs; laser diode;

D O I：

10.1016/j.jcrysgro.2005.10.138

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAs/GaAs/AlGaAs quantum well (QW) structures have been grown at different temperatures by metalorganic chemical vapor deposition (MOCVD) with tertiarybutylarsine (TBAs) as the group V source, and it is found that the QW structures grown at 640 degrees C shows the strongest photoluminescence (PL) emission. Based on the optimized growth conditions, the InGaAs/GaAs/AlGaAs graded index (GRIN) separate confinement heterostructure (SCH) double quantum well lasers have been grown with TBAs. The 4-mu m-wide ridge waveguide lasers show room temperature continuous-wave lasing around 980 nm, with a typical threshold current of 14 mA, indicating that TBAs could be a promising alternative to the highly hazardous gas source AsH3 in growing InGaAs/GaAs/Al GaAs 980 rim QW lasers. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：59 / 62

页数：4

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