Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

被引：128

作者：

Lenox, C ^{[1
]}

Nie, H ^{[1
]}

Yuan, P ^{[1
]}

Kinsey, G ^{[1
]}

Homles, AL ^{[1
]}

Streetman, BG ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78758 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 09期

基金：

美国国家科学基金会;

关键词：

avalanche photodiode; gain-bandwidth product; InAlAs; InGaAs; InP; noise; optical fiber systems; resonant-cavity;

D O I：

10.1109/68.784238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated a high-speed, resonant-cavity InGaAs-InAlAs separate absorption, charge, and multiplication avalanche photodiode (APD) operating at a wavelength of 1.55 mu m, Due to the resonant-cavity scheme, these APD's exhibit high external quantum efficiency (similar to 70%) and a high unity-gain bandwidth of 24 GHz. Utilizing the excellent noise characteristics of a thin InAlAs multiplication region (kappa similar to 0.18), we have also achieved a gain-bandwidth product of 290 GHz. These bandwidth results are believed to be the highest reported values for APD's operating at 1.55 mu m.

引用

页码：1162 / 1164

页数：3

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