Weak-Field Magnetoresistance in Graphene with Long-Range Scatterers

被引：3
|
作者：
Ando, Tsuneya [1 ,2 ,3 ]
机构：
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
[2] Sungkyunkwan Univ, SKKU Adv Inst Nano Technol, Suwon 16419, Gyeonggi Do, South Korea
[3] Toyota Phys & Chem Res Inst, Nagakute, Aichi 4801192, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2019年 / 88卷 / 03期
关键词：
NEGATIVE MAGNETORESISTANCE; ELECTRONIC-PROPERTIES; BAND-STRUCTURE; GRAPHITE; TRANSPORT; LOCALIZATION; DIAMAGNETISM; MONOLAYER; ABSENCE; STATES;
D O I：
10.7566/JPSJ.88.034701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The magnetoconductivity proportional to B-2 with B the strength of applied magnetic field is calculated in monolayer graphene in a self-consistent Born approximation for scatterers with long-range potentialsuch as a Gaussian potential and a screened Coulomb potential. The results are used for obtaining the magnetoresistivity proportional to B-2 in the Hall-bar geometry together with the weak-field Hall conductivity proportional to B. The magnetoresistivity shows a distinct and sharp double-peak structure in the vicinity of zero energy.
引用
收藏
页数：9
相关论文
共 50 条
12345