Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs -: art. no. 041118

被引:25
|
作者
Mikulics, M [1 ]
Michael, EA
Schieder, R
Stutzki, J
Güsten, R
Marso, M
van der Hart, A
Bochem, HP
Lüth, H
Kordos, P
机构
[1] Max Planck Inst Radioastron, D-53121 Bonn, Germany
[2] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
[3] Tech Univ Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany
[4] Univ Cologne, Inst Phys, D-50937 Cologne, Germany
[5] CNI, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
[6] Slovak Univ Technol Bratislava, Inst Microelect, SK-81219 Bratislava, Slovakia
[7] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
关键词
D O I
10.1063/1.2168250
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal (MSM) contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers. (c) 2006 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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