Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

被引：37

作者：

Tsai, Tsung-Ming ^{[1
]}

Chang, Kuan-Chang ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Syu, Yong-En ^{[3
]}

Liao, Kuo-Hsiao ^{[1
]}

Tseng, Bae-Heng ^{[1
]}

Sze, Simon M. ^{[2
,4
,5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

FILM;

D O I：

10.1063/1.4750235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750235]

引用

页数：4

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