Gas-phase selective area laser deposition (SALD) joining of SiC

被引：13
|
作者：
Harrison, S [1 ]
Marcus, HL [1 ]
机构：
[1] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
来源：
MATERIALS & DESIGN | 1999年 / 20卷 / 2-3期
关键词：
joining; lasers; engineering ceramics;
D O I：
10.1016/S0261-3069(99)00021-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The laser-driven, gas-phase based SFF technique for joining together ceramic components with ceramic filler material, known as Selective Area Laser Deposition (SALD) Joining, was utilized in fabricating joined silicon carbide structures. Specifically, silicon carbide tubes were 'welded' together by depositing silicon carbide from a gas phase reaction. A single laser beam deposition setup and a dual laser beam design were investigated. A gas environment of tetramethylsilane and hydrogen served as the deposition precursors. The quality of the joints were examined by bend tests and hermeticity measurements. In addition, the composition and morphology of the silicon carbide deposit was studied and is discussed here. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：147 / 152
页数：6
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