FEA Study of the Evolution of Wafer Warpage During Reflow Process in WLP

被引：0
|
作者：
Zhu, Chunsheng [1 ]
Ning, Wenguo [1 ]
Ye, Jiaotuo [1 ]
Xu, Gaowei [1 ]
Luo, Le [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Infonnat Technol, Shanghai 200050, Peoples R China
来源：
2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the evolution of wafer warpage during reflow process in wafer level packaging (WLP) is investigated by finite element analysis (FEA). The investigation focuses on three different fan-in WLP technologies: ball on polymer WLP without under bump metallurgy (UBM), ball on polymer WLP with thick UBM layer and encapsulated copper post WLP. Both wafer-level model and ball-level model are built and the results indicate that wafer warpage derived from ball-level model is compatible with wafer-level model. Ball on polymer WLP with thick UBM layer has the maximum warpage after reflow process. Reflow profiles with different cooling rate are also simulated.
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收藏
页码：660 / 664
页数：5
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