Characterization of Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

被引：11

作者：

BenMoussa, Ali ^{[1
]}

Giordanengo, Boris ^{[1
]}

Gissot, Samuel ^{[1
]}

Meynants, Guy ^{[2
]}

Wang, Xinyang ^{[2
]}

Wolfs, Bram ^{[2
]}

Bogaerts, Jan ^{[2
]}

Schuehle, Udo ^{[3
]}

Berger, Guy ^{[4
]}

Gottwald, Alexander ^{[5
]}

Laubis, Christian ^{[5
]}

Kroth, Udo ^{[5
]}

Scholze, Frank ^{[5
]}

机构：

[1] Royal Observ Belgium, Solar Terr Ctr Excellence, B-1180 Brussels, Belgium

[2] CMOSIS Nv, B-2600 Antwerp, Belgium

[3] Max Planck Inst Sonnensyst Forsch, D-37191 Katlenburg Lindau, Germany

[4] Catholic Univ Louvain, B-1348 Louvain, Belgium

[5] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 05期

关键词：

Calibration; CMOS image sensors; space technology; DARK CURRENT; NOISE CHARACTERIZATION; BESSY-II; SENSOR; TECHNOLOGY; CCD;

D O I：

10.1109/TED.2013.2255103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the Extreme Ultraviolet Imager (EUI) of the Solar Orbiter mission, to be launched in 2017, CMOS active pixel sensor (APS) prototypes have been developed with several test pixel designs. A set of measurements was carried out to evaluate their performance characteristics in visible and in extreme ultraviolet wavelengths. We present the results of measurement campaigns that lead to the selection of a preferred pixel design in regard to the scientific performance requirements of the EUI flight model detectors, i.e., back-thinned CMOS APS devices of 2048 x 2048 and 3072 x 3072 pixel formats with a 10-mu m pixel pitch.

引用

页码：1701 / 1708

页数：8

共 22 条

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Kroth, U.
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (05) : 3907 - 3914
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