Effects of Annealing on Band Gap and Hotoelectrical Properties of Spin Coated Poly (3-hexylthiophene) (P3HT) Thin Films

被引：0
|
作者：
Aruna, P. [1 ]
Joseph, C. M. [1 ]
机构：
[1] Dayananda Sagar Coll Engn, Dept Phys, Shavige Malleswara Hills, Bangalore 560078, Karnataka, India
来源：
2017 INTERNATIONAL CONFERENCE ON INNOVATIVE MECHANISMS FOR INDUSTRY APPLICATIONS (ICIMIA) | 2017年
关键词：
Organic semiconductor; P3HT Thin films; Annealing; Optical properties; photoelectrical properties; PLASTIC SOLAR-CELLS; PHOTOELECTRICAL PROPERTIES; SEMICONDUCTING POLYMERS; CONJUGATED POLYMERS; POLY(3-HEXYLTHIOPHENE); SENSORS; BLENDS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Poly (3-hexylthiophene) (P3HT) thin films were spin coated onto plain glass and ITO coated glass substrates to study their optical and photoelectrical properties respectively. Optical studies were done using Uv-vis radiation to study the absorption and the band gap. Photoelectrical properties of P3HT were studied by noting the resistance variation with respect to light. Rapid decrease in resistance with light indicates their sensitivity to light. Annealing effect on band gap and photoelectrical studies were studied by annealing the thin films in vacuum at different temperatures, 353 K, 373 K and 393 K. Variation in band gap and also the device responsivity and photoresponse with annealing temperature was noted. Due to annealing, band gap reduced and it was lesser for the film annealed at 373 K. Similar trend was observed in photoelectrical studies, the device which was annealed at 373 K exhibited higher responsivity and photoresponse.
引用
收藏
页码：438 / 441
页数：4
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