A SiGe monolithically integrated 75 GHz Push-Push VCO

被引：0
|
作者：
Wanner, R [1 ]
Lachner, R
Olbrich, GR
机构：
[1] Tech Univ Munich, Lehrstuhl Hochfrequenztech, Arcisstr 21, D-80333 Munich, Germany
[2] Infineon Technol AG, Munich, Germany
来源：
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present a fully monolithically integrated push-push VCO fabricated in a production-near SiGe:C bipolar technology. The output frequency of the oscillator can be varactor tuned from. 71.3GHz to 75.8GHz. In this tuning range the measured output power is 3.5 +/- 0.4dBm and the measured single sideband phase noise is less than -105dBc/Hz at 1MHz offset frequency. The SiGe:C bipolar transistors show a maximum transit frequency f(T) = 200GHz and a maximum frequency of oscillation f(max) = 275GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.
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页码：375 / +
页数：2
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