Strain-Engineered SiGe Nanomembrane Quantum-Well Infrared Photodetectors

被引:0
|
作者
Durmaz, H. [1 ,2 ,3 ]
Sookchoo, P. [4 ]
Cui, X. [4 ]
Jacobson, R. B. [4 ]
Savage, D. E. [4 ]
Lagally, M. G. [4 ]
Paiella, R. [1 ,2 ]
机构
[1] Boston Univ, Dept Elect & Comp Engn, 8 St Marys St, Boston, MA 02215 USA
[2] Boston Univ, Photon Ctr, 8 St Marys St, Boston, MA 02215 USA
[3] Recep Tayyip Erdogan Univ, Dept Elect & Elect Engn, TR-02215 Rize, Turkey
[4] Univ Wisconsin Madison, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA
关键词
INTERSUBBAND ELECTROLUMINESCENCE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SiGe quantum-well nanomembranes, where stress from lattice mismatch is relaxed via elastic strain sharing rather than defect formation, are used to develop intersubband photodetectors showing improved performance compared to identical devices grown on rigid substrates.
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页数:2
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