Further Meyer-Neldel Rule for Thermally Activated High Field Conduction in Thin Films of Glassy Se100-xSbx Alloys

被引：4
|
作者：
Mehta, Neeraj [1 ]
Kushwaha, Virendra S. [2 ]
Kumar, Ashok [3 ]
机构：
[1] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India
[2] Kanpur Inst Technol, Dept Phys, Kanpur 208001, Uttar Pradesh, India
[3] Harcourt Butler Technol Inst, Dept Phys, Kanpur 208002, Uttar Pradesh, India
来源：
INTERNATIONAL JOURNAL OF APPLIED GLASS SCIENCE | 2010年 / 1卷 / 02期
关键词：
SE; CRYSTALLIZATION; APPLICABILITY; A-SE75IN21PB4; TRANSITION; GAP;
D O I：
10.1111/j.2041-1294.2010.00016.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the present work, we report the applicability of the further Meyer-Neldel rule in thin films of glassy Se100-xSbx alloys for thermally activated high field conduction using two different methods. In first case, the temperature dependence of dc conductivity is studied at different electric fields without changing the composition of the glassy system, whereas, in the second case, the composition itself varies at a particular electric field. A strong correlation between prefactor sigma(00) and Meyer-Neldel energy in both cases is also observed. The observation of the correlation between prefactor sigma(00) and Meyer-Neldel energy can be described by multiple excitations stimulated by phonon energy as described by Yelon and Movaghar.
引用
收藏
页码：172 / 179
页数：8
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