Hybrid 2D nanodevices (graphene/h-BN): selecting NOx gas through the device interface

被引:41
|
作者
de Souza, Fabio A. L. [1 ]
Sivaraman, Ganesh [2 ]
Hertkorn, Jens [3 ]
Amorim, Rodrigo G. [4 ]
Fyta, Maria [3 ]
Scopel, Wanderla L. [5 ]
机构
[1] Fed Inst Educ Sci & Technol Espirito Santo, Ibatiba, ES, Brazil
[2] Argonne Natl Lab, 9700 South Cass Ave, Argonne, IL 60439 USA
[3] Univ Stuttgart, Inst Computat Phys, Allmandring 3, D-70569 Stuttgart, Germany
[4] UFF, ICEx, Dept Fis, Volta Redonda, RJ, Brazil
[5] Univ Fed Espirito Santo, Dept Fis, Vitoria, ES, Brazil
关键词
HEXAGONAL BORON-NITRIDE; INPLANE HETEROSTRUCTURES; SENSORS;
D O I
10.1039/c9ta00674e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent experiments demonstrated a highly controlled synthesis of in-plane graphene/hexagonal boron nitride heterostructures, thereby paving the way for the development of a new category of hybrid 2D nanodevices with different interfaces. Herein, by employing a combination of density functional theory (DFT) and the non-equilibrium Green's function formalism (NEGF), the gas sensor capability of G-hBN, containing two different interfaces is assessed by exposing it to NO, NO2, NH3, and CO2 gas molecules. Our results show that the strongest interaction occurs between NOx molecules and G-hBN; meanwhile, NO and NO2 molecules are more reactive in the interface regions than the pristine ones. In addition, the electron transport properties reveal that for a distinct two-port voltage applied, the gas molecule NO (NO2) can be detected by large changes in the conductance and CO2(NH3) has insignificant signal conductance, leading to selectivity for the gas. The proposed device is a great potential candidate to be applied as a NOx gas selector through a 2D nanodevice interface.
引用
收藏
页码:8905 / 8911
页数:7
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