Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications

被引：8
|
作者：
Guo, Maoxiang [1 ]
Chou, Xiujian [1 ]
Mu, Jiliang [1 ]
Liu, Bing [1 ]
Xiong, Jijun [1 ]
机构：
[1] North Univ China, Key Lab Instrumentat Sci & Dynam Measurement, Minist Educ Sci & Technol, Elect Test & Measurement Lab, Taiyuan, Peoples R China
来源：
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2013年 / 19卷 / 07期
基金：
中国国家自然科学基金;
关键词：
SILICON;
D O I：
10.1007/s00542-012-1720-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished.
引用
收藏
页码：1097 / 1103
页数：7
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