Tunable Electrochemical Oscillation and Regular 3D Nanopore Arrays of InP

被引：6

作者：

Chai, Xiangyu ^{[1
,2
]}

Weng, Zhankun ^{[1
,2
]}

Xu, Liping ^{[1
,2
]}

Wang, Zuobin ^{[1
,2
,3
,4
]}

机构：

[1] Changchun Univ Sci & Technol, CNM, Changchun 130022, Peoples R China

[2] Changchun Univ Sci & Technol, JR3CN, Changchun 130022, Peoples R China

[3] Univ Bedfordshire, JR3CN, Luton LU1 3JU, Beds, England

[4] Univ Bedfordshire, IARC, Luton LU1 3JU, Beds, England

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2015年 / 162卷 / 09期

关键词：

VOLTAGE OSCILLATIONS; N-INP; ANODIZATION; SILICON; GROWTH; MORPHOLOGY; LAYERS; PORES;

D O I：

10.1149/2.0341509jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tunable potential oscillations are obtained by electrochemical etching of n-InP (100) in the 3 M NaCl solution using the chronoptentiometry with current ramp. The regular 3D nanopore arrays are formed with the change of the current density from 320 to 260 mA . cm(-2) at the scan rate 0.72 - 0.80 mA . cm(-2) . s(-1). The results showed that the current density ranges and scan rate have the effect on the E-t curves and the pore's morphology. The scan rate can regulate not only on the charge consumed per period but also on the amplitude of potential oscillation, and shown that the charge per period and the amplitude can be tuned when proper electrochemical parameters are selected. Furthermore, the pore's morphology will change from the regular structure to irregular with the increasing of the scan rate. In addition, the relation has also been discussed between the E-t curves and the pore's morphology. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：E129 / E133

页数：5

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