Planarizing AR for DUV lithography

被引:8
|
作者
Adams, T [1 ]
Coley, S [1 ]
doCanto, M [1 ]
Gronbeck, D [1 ]
King, M [1 ]
Pavelchek, E [1 ]
机构
[1] Shipley Co Inc, Marlboro, MA 01752 USA
关键词
planarizing AR; degree of planarization; plasticizer; glass transition temperature;
D O I
10.1117/12.350273
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A systematic approach was taken in order to improve the planarity of a DW Anti Reflectent (AR) utilized for various lithographic steps, particularly those involving a patterned transparent layer. These layers can occur in both front and back end processing. Two approaches were pursued to accomplish this. The first approach was to minimize the molecular weight of the AR polymer. Polymers with weight average molecular weights from 45,000 daltons to as low as 2,300 daltons were evaluated. The planarity of the AR improved significantly for polymers with Mw's below 20,000 daltons. The second approach was to add plasticizers in order to reduce the glass transition temperature of the precrosslinked film. The addition of plasticizers to the AR was effective in increasing the planarity. One of the plasticizers contained a DUV chromophore used to maintain the required optical density of the AR. It was proven possible to make these changes while maintaining lithographic performance in both resist profiles and reflection control.
引用
收藏
页码:849 / 856
页数:8
相关论文
共 50 条
  • [1] A tunable AR for DUV lithography
    Pavelchek, EK
    doCanto, M
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 932 - 943
  • [2] Manufacturing with DUV lithography
    Holmes, SJ
    Mitchell, PH
    Hakey, MC
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1997, 41 (1-2) : 7 - 19
  • [3] Metamaterials for enhancement of DUV lithography
    Estroff, Andrew
    Lafferty, Neal V.
    Xie, Peng
    Smith, Bruce W.
    [J]. OPTICAL MICROLITHOGRAPHY XXIII, 2010, 7640
  • [4] A highly absorbing ARC for DUV lithography
    Pavelchek, EK
    Meador, JD
    Guerrero, DJ
    Lamb, JE
    Kache, A
    doCanto, M
    Adams, TG
    Stark, D
    Miller, D
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 : 692 - 699
  • [5] ASML and IMEC to work on DUV lithography
    不详
    [J]. SOLID STATE TECHNOLOGY, 1997, 40 (02) : 44 - 44
  • [6] Specular spectroscopic scatterometry in DUV lithography
    Niu, XH
    Jakatdar, N
    Bao, JW
    Spanos, C
    Yedur, S
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIII, PTS 1 AND 2, 1999, 3677 : 159 - 168
  • [7] Dielectric antireflective coatings for DUV lithography
    Bencher, C
    Ngai, C
    Roman, B
    Lian, S
    Vuong, T
    [J]. SOLID STATE TECHNOLOGY, 1997, 40 (03) : 109 - &
  • [8] Amine gradient process for DUV lithography
    Jung, JC
    Jung, MH
    Lee, G
    Balk, KH
    [J]. POLYMER, 2001, 42 (01) : 161 - 165
  • [9] Practical DUV lithography for the optoelectronics market
    Harris, PD
    [J]. MICROLITHOGRAPHY WORLD, 2004, 13 (01): : 18 - 20
  • [10] DUV laser lithography for photomask fabrication
    Jackson, C
    Buck, P
    Cohen, S
    Garg, V
    Howard, C
    Kiefer, R
    Manfredo, J
    Tsou, J
    [J]. OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 1005 - 1016