Porous silicon and cadmium-mercury-telluride (CMT) based heterostructures for IR detectors

被引：0
|
作者：
Monastyrskii, LS [1 ]
Vlasov, AP [1 ]
Kovtun, RM [1 ]
机构：
[1] I Franko Lviv Natl Univ, Dept Phys, UA-290005 Lvov, Ukraine
来源：
MATERIALS FOR INFRARED DETECTORS | 2001年 / 4454卷
关键词：
photosensitivity; IR detectors; porous silicon; heterostructure;
D O I：
10.1117/12.448182
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We were insvestigated the creating process of porous silicon (porSi) and CdHgTe based heterostructures for IR detectors. We were studied current-voltage characteristics, photosensitivity and photoconductivity in such heterojunctions and heterostructures after Hg ion irradiations. It was shown that studied heterostructures may be used for IR detectors.
引用
收藏
页码：238 / 243
页数：6
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