Silicon-based ultraviolet photodetection : progress and prospects

被引:4
|
作者
Zhang Meng-jiao [1 ,4 ]
Cai Yi [1 ,2 ]
Jiang Feng [3 ]
Zhong Hai-zheng [3 ]
Wang Ling-xue [1 ]
机构
[1] Beijing Inst Technol, Sch Opt & Photon, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China
[2] China Res & Dev Acad Machinery Equipment, Beijing 100089, Peoples R China
[3] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[4] East China Inst Optoelect Integrated Device, Suzhou 215163, Peoples R China
来源
CHINESE OPTICS | 2019年 / 12卷 / 01期
基金
中国国家自然科学基金;
关键词
silicon; ultraviolet; image sensor; imaging detection; CHARGE-COUPLED-DEVICE; ACTIVE PIXEL SENSOR; IN-SITU FABRICATION; PHOTO-DIODE ARRAY; BROAD-BAND; UV; HETEROJUNCTION; SPECTROSCOPY; COATINGS; FILMS;
D O I
10.3788/CO.20191201.0019
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Silicon-based photodetectors are beneficial for their reliability, integration, scalability and low cost. However, due to their shallow penetration depth for UV radiation, conventional silicon devices have very limited ultraviolet responses. Motivated by the progress of silicon-based semiconductor processing techniques and nanoscience, UV-enhanced silicon-based photodetectors have been well developed and broadly applied. In this paper, we review the progress of this technology, its materials, its processing techniques and its applications in astrophysics, biochemical analysis and corona detection, and discuss the challenges and future prospects of silicon-based UV detection in sensitive imaging technologies.
引用
收藏
页码:19 / 37
页数:19
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