FRACTALITY AS A NEW NANOTECHNOLOGICAL DIRECTION OF SEMICONDUCTOR MATERIAL SCIENCE

被引:0
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作者
Torkhov, N. A. [1 ]
机构
[1] Sci Res Inst Semicond, 99A Krasnoarmeiskaya Str, Tomsk 634034, Russia
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Studies have shown that in the local approximation, the behavior of electrical properties of semiconductor surfaces, interfaces, processes of current flow and charge transport, as well as the majority of technological processes on the nano-level satisfy all properties of chaotic systems. In the local approximation, the dependences of the electrophysical properties of objects and geometry of technological processes on the linear dimensions and fractional values of fractal dimensions allow making control of the properties of semiconductors and technological processes on the nano-level, which is a sign of a new nanotechnology direction in semiconductor material science. Unlike quantum effects, not only the energy properties of electron gas, but also almost all other physical properties of semiconductors obey the fractal regularities in the local approximation.
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页码:663 / 664
页数:2
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