Resistive switching in single vertically-aligned ZnO nanowire grown directly on Cu substrate

被引：11

作者：

Dugaiczyk, Lars ^{[1
,2
,3
]}

Tam-Triet Ngo-Duc ^{[1
,2
]}

Gacusan, Jovi ^{[1
,2
]}

Singh, Karandeep ^{[1
,2
]}

Yang, Jonathan ^{[1
,2
]}

Santhanam, Sarnath ^{[2
,3
]}

Han, Jin-Woo ^{[1
,2
]}

Koehne, Jessica E. ^{[1
,2
]}

Kobayashi, Nobuhiko P. ^{[2
,3
]}

Meyyappan, M. ^{[1
]}

Oye, Michael M. ^{[1
,2
,3
]}

机构：

[1] NASA, Ames Res Ctr, Ames Ctr Nanotechnol, Moffett Field, CA 94035 USA

[2] NASA, Ames Res Ctr, UCSC NASA ARC Adv Studies Labs, Moffett Field, CA 94035 USA

[3] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA

来源：

CHEMICAL PHYSICS LETTERS | 2013年 / 575卷

关键词：

MEMORY;

D O I：

10.1016/j.cplett.2013.05.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report unipolar resistive switching measurements from single vertical ZnO nanowires grown directly on a copper substrate. Electrical measurements using a conductive atomic force microscope show conductive filament formation at 30 kV/cm, which is an order of magnitude lower field than that for bulk films and suggest a preferential filament formation likely on the surface of the nanowires. A high resistive ratio of three orders of magnitude was observed between the high and low resistive memory states. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：112 / 114

页数：3

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